| PART |
Description |
Maker |
| SPM2001A |
GaAs MMIC For 1.9GHz PHS Transmitting Amplifier(砷化1.9GHz PHS发射放大 砷化镓微波单片集成电路为1.9GHz的小灵通发射放大器（砷化镓1.9GHz的小灵通发射放大器
From old datasheet system
MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSOP,6PIN,PLASTIC
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor Corp
|
| NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJ |
1.5GHz/1.9GHz Mixer GaAs MMIC(1.5GHz/1.9GHz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
| MAPR-002729-170M00 |
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100μsec, 170W
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100レsec, 170W
|
MACOM[Tyco Electronics]
|
| CHA6250-QFG CHA6250-QFG20 |
5.5-9GHz Power Amplifier
|
United Monolithic Semiconductors
|
| TA4009F |
1.9GHz BAND PRE AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| RF5515PCK-410 |
4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER WITH ENABLE
|
RF Micro Devices
|
| SZA6044ZPCK-EVB1 |
5.1GHzto5.9GHz ?WATT POWER AMPLIFIER WITH ACTIVE BIAS
|
RF Micro Devices
|
| RF5836 |
4.9GHz TO 5.85GHz 802.11a/n FRONT END MODULE
|
RF Micro Devices
|
